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| Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION With TO-3PFa package High DC current gain Low collector saturation voltage Complement to type 2SB1255 APPLICATIONS Power amplification Optimum for 90W high-fidelity output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SD1895 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 5 15 8 TC=25ae 100 Emitter-base voltage Collector current Collector current-peak Open collector Emitter UNIT V V V A A PC Collector power dissipation 3 W Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=30mA ; IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V; IE=0 VCE=140V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V 2000 5000 30000 MHz MIN 140 2.5 3.0 100 100 100 |I |I |I TYP. MAX UNIT V V V A A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT Switching times ton tstg tf TOR NDU ICO E SEM ANG INCH Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 Turn-on time Storage time 2.0 IC=7A; VCC=50V IB1=-IB2=7mA 6.0 Fall time 1.2 |I |I |I s s s hFE-2 classifications Q 5000-15000 P 8000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD1895 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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